发明名称 Driving circuit, liquid discharge substrate, and inkjet printhead
摘要 A driving circuit which includes a plurality of MOS transistors electrically connected in parallel between a first node and a second node, and drives a load electrically connected between the first node and a third node by the plurality of MOS transistors, wherein the plurality of MOS transistors include at least two MOS transistors having channel lengths different from each other and thus having threshold voltages different from each other.
申请公布号 US8789926(B2) 申请公布日期 2014.07.29
申请号 US201213493185 申请日期 2012.06.11
申请人 Canon Kabushiki Kaisha 发明人 Endo Wataru;Oomura Masanobu
分类号 B41J2/05 主分类号 B41J2/05
代理机构 Fitzpatrick, Cella, Harper & Scinto 代理人 Fitzpatrick, Cella, Harper & Scinto
主权项 1. A driving circuit which includes a plurality of MOS transistors electrically connected in parallel between a first node and a second node, and drives a load electrically connected between the first node and a third node by the plurality of MOS transistors, wherein the plurality of MOS transistors include at least two MOS transistors having channel lengths different from each other thereby having threshold voltages different from each other, the at least two MOS transistors include a first MOS transistor and a second MOS transistor having a longer channel length than that of the first MOS transistor, and the second MOS transistor has a larger threshold voltage than that of the first MOS transistor, and wherein each of the plurality of MOS transistors includes: a first conductivity type well region and a second conductivity type well region formed on a semiconductor substrate, a first conductivity type drain region formed in part of the first conductivity type well region, a first conductivity type source region formed in part of the second conductivity type well region, a LOCOS formed on part of the first conductivity type well region, and a gate electrode formed on the second conductivity type well region via a gate oxide film and on the LOCOS.
地址 Tokyo JP