| 发明名称 | ESD-robust I/O driver circuits | ||
| 摘要 | An ESD-robust I/O driver circuit is disclosed. Embodiments include providing a first NMOS transistor having a first source, a first drain, and a first gate; coupling the first source is coupled to a ground rail, and the first drain to an I/O pad; providing a gate driver control circuit including a second NMOS transistor having a second source, a second drain, and a second gate; and coupling the second drain to the first gate, the second source to the ground rail, wherein the gate driver control circuit provides a ground potential to the first gate during an ESD event occurring from the I/O pad to the ground rail. | ||
| 申请公布号 | US8792219(B2) | 申请公布日期 | 2014.07.29 |
| 申请号 | US201213482423 | 申请日期 | 2012.05.29 |
| 申请人 | GlobalFoundries Singapore Pte. Ltd. | 发明人 | Lai Da-Wei;Lin Ying-Chang |
| 分类号 | H02H3/22 | 主分类号 | H02H3/22 |
| 代理机构 | Ditthavong & Steiner, P.C. | 代理人 | Ditthavong & Steiner, P.C. |
| 主权项 | 1. A circuit comprising: a first NMOS transistor having a first source, a first drain, and a first gate, wherein the first source is coupled to a ground rail, and the first drain is coupled to an I/O pad; a gate driver control circuit including a second NMOS transistor having a second source, a second drain, and a second gate, wherein the second drain is coupled to the first gate, the second source is coupled to the ground rail, and the gate driver control circuit provides a ground potential to the first gate during an ESD event occurring from the I/O pad to the ground rail; and an ESD clamp including a third NMOS transistor having a third source, a third drain, and a third gate, wherein the second and third gates are coupled. | ||
| 地址 | Singapore SG | ||