发明名称 Non-linear element, display device including non- linear element, and electronic device including display device
摘要 A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5×1019/cm3, the work function φms of a source electrode in contact with the oxide semiconductor, the work function φmd of a drain electrode in contact with the oxide semiconductor, and electron affinity χ of the oxide semiconductor satisfy φms≦χ<φmd. By electrically connecting a gate electrode and the drain electrode of the thin film transistor, a non-linear element with a more favorable rectification property can be achieved.
申请公布号 US8791456(B2) 申请公布日期 2014.07.29
申请号 US201313835435 申请日期 2013.03.15
申请人 Semiconductor Energy Laboratory Co. Ltd. 发明人 Yamazaki Shunpei;Kawae Daisuke
分类号 H01L29/10;H01L29/12;H01L27/12 主分类号 H01L29/10
代理机构 Fish &amp; Richardson P.C. 代理人 Fish &amp; Richardson P.C.
主权项 1. A protection circuit comprising: a resistor; a diode; a first power supply line; a second power supply line electrically connected to a first terminal of the resistor; and a signal line electrically connected to a first terminal of the diode and a second terminal of the resistor; wherein a second terminal of the diode is electrically connected to one of the first power supply line and the second power supply line, wherein the diode is a diode-connected transistor including an oxide semiconductor layer including In—Ga—Zn—O based oxide semiconductor, and wherein a hydrogen concentration in the oxide semiconductor layer is less than or equal to 5×1019/cm3.
地址 Atsugi-shi, Kanagawa-ken JP