发明名称 |
Non-linear element, display device including non- linear element, and electronic device including display device |
摘要 |
A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5×1019/cm3, the work function φms of a source electrode in contact with the oxide semiconductor, the work function φmd of a drain electrode in contact with the oxide semiconductor, and electron affinity χ of the oxide semiconductor satisfy φms≦χ<φmd. By electrically connecting a gate electrode and the drain electrode of the thin film transistor, a non-linear element with a more favorable rectification property can be achieved. |
申请公布号 |
US8791456(B2) |
申请公布日期 |
2014.07.29 |
申请号 |
US201313835435 |
申请日期 |
2013.03.15 |
申请人 |
Semiconductor Energy Laboratory Co. Ltd. |
发明人 |
Yamazaki Shunpei;Kawae Daisuke |
分类号 |
H01L29/10;H01L29/12;H01L27/12 |
主分类号 |
H01L29/10 |
代理机构 |
Fish & Richardson P.C. |
代理人 |
Fish & Richardson P.C. |
主权项 |
1. A protection circuit comprising:
a resistor; a diode; a first power supply line; a second power supply line electrically connected to a first terminal of the resistor; and a signal line electrically connected to a first terminal of the diode and a second terminal of the resistor; wherein a second terminal of the diode is electrically connected to one of the first power supply line and the second power supply line, wherein the diode is a diode-connected transistor including an oxide semiconductor layer including In—Ga—Zn—O based oxide semiconductor, and wherein a hydrogen concentration in the oxide semiconductor layer is less than or equal to 5×1019/cm3. |
地址 |
Atsugi-shi, Kanagawa-ken JP |