Method for reducing wordline bridge rate

摘要

The method of forming a wordline is provided in the present invention. The proposed method includes steps of: (a) etching a metal-silicide layer and a POLY layer via a hard mask, wherein the metal-silicide layer is disposed on the POLY layer; (b) forming a POLY recess in the POLY layer; and (c) forming a liner film covering the metal-silicide layer.

主权项

1. A method of forming a wordline, comprising steps of:
(a) performing a wordline hard mask etch; (b) performing a wordline metal-silicide etch to form a polysilicon layer recess under an interface of a metal-silicide layer and a polysilicon layer having a top portion; (c) performing a liner deposition; (d) performing a liner and polysilicon layer etch to form a liner film covering the metal-silicide layer and the top portion; and (e) performing a hot standard clean 1 (SC1) dip to form a T-shaped polysilicon layer.