发明名称 |
Pattern forming method |
摘要 |
A pattern forming method is disclosed. The method includes the steps of: forming a dielectric layer on a substrate; forming a first patterned mask on the dielectric layer, wherein the first patterned mask comprises an opening; forming a material layer on the dielectric layer and covering the first patterned mask; forming a second patterned mask on the material layer, wherein the second patterned mask comprises a first aperture; forming a second aperture in the second patterned mask after forming the first aperture, wherein the second aperture and the first aperture comprise a gap therebetween and overlap the opening; and utilizing the second patterned mask as an etching mask for partially removing the material layer and the dielectric layer through the first aperture and the second aperture. |
申请公布号 |
US8791013(B2) |
申请公布日期 |
2014.07.29 |
申请号 |
US201213568137 |
申请日期 |
2012.08.07 |
申请人 |
United Microelectronics Corp. |
发明人 |
Chen Shin-Chi;Lai Yu-Tsung;Liao Jiunn-Hsiung;Hwang Guang-Yaw |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
主权项 |
1. A pattern forming method, comprising:
forming a dielectric layer on a substrate; forming a first patterned mask on the dielectric layer, wherein the first patterned mask comprises an opening; forming a material layer on the dielectric layer and covering the first patterned mask; forming a second patterned mask on the material layer, wherein the second patterned mask comprises a first aperture; forming a second aperture in the second patterned mask after forming the first aperture, wherein the second aperture and the first aperture comprise a gap therebetween and overlap the opening; and utilizing the second patterned mask as an etching mask for partially removing the material layer and the dielectric layer through the first aperture and the second aperture. |
地址 |
Science-Based Industrial Park, Hsin-Chu TW |