Solid state imaging device, method of producing solid state imaging device, and electronic apparatus

摘要

A solid state imaging device includes: a substrate; a photoelectric conversion unit that is formed on the substrate to generate and accumulate signal charges according to light quantity of incident light; a vertical transmission gate electrode that is formed to be embedded in a groove portion formed in a depth direction from one side face of the substrate according to a depth of the photoelectric conversion unit; and an overflow path that is formed on a bottom portion of the transmission gate to overflow the signal charges accumulated in the photoelectric conversion unit.

主权项

1. A method of producing a solid state imaging device comprising:
forming a photoelectric conversion unit formed of a photodiode, on a substrate; forming an overflow path formed of a second conductive semiconductor area in a depth connectable to the second conductive semiconductor area that is a charge accumulation area of the photoelectric conversion unit in an area adjacent to an area of the substrate in which the photoelectric conversion unit is formed; forming a groove portion at an upper portion of the second conductive semiconductor area that is the overflow path, adjacent to the photoelectric conversion unit; forming a vertical transmission gate electrode by embedding an electronic material through a gate insulating film in the groove portion; and forming a floating diffusion area formed of the second conductive semiconductor area and connected to the second conductive semiconductor area that is the overflow path in an area adjacent to the transmission gate electrode.