Method and device for ion beam processing of surfaces

摘要

A method and device for ion beam processing of surfaces of a substrate positions the substrate to face an ion beam, and a new technologically-defined pattern of properties is established. According to the method, the current geometrical effect pattern of the ion beam on the surface of the substrate is adjusted depending on the known pattern of properties and the new technologically-defined pattern of properties, and depending upon the progress of the processing, by modifying the beam characteristic and/or by pulsing the ion beam. A device for carrying out the method includes a substrate support for holding at least one substrate, which can be moved along an Y-axis and an X-axis, and an ion beam source for generating an ion beam, which is perpendicular to the surface to be processed of the substrate in the Z-axis or which may be arranged in an axis, inclined in relation to the Z-axis. The distance between the ion beam source and the surface to be processed of the substrate may be fixed or variable.

主权项

1. An ion beam processing method for changing surface properties of a substrate from a known pattern of properties to a new technically defined pattern of properties, comprising:
positioning the substrate relative to an ion beam that is generated by an ion beam source; measuring a current geometric action pattern of the ion beam with an ion probe array during processing of the substrate; and adjusting the geometric action pattern of said ion beam based on the measured geometric action pattern and the known pattern of properties, said adjusting comprising varying local ion current density distributions within an ion beam cross section, thereby causing a corresponding variation of ion energy distribution at defined surface area regions of the substrate that ions of the ion beam act upon; wherein the current geometric action pattern of said ion beam on the surface of the substrate is measured prior to and/or during the course of said method by the ion probe which is arranged in a plane of the surface of the substrate to be processed.