发明名称 Method of switching out-of-plane magnetic tunnel junction cells
摘要 A method of switching the magnetization orientation of a ferromagnetic free layer of an out-of-plane magnetic tunnel junction cell, the method including: passing an AC switching current through the out-of-plane magnetic tunnel junction cell, wherein the AC switching current switches the magnetization orientation of the ferromagnetic free layer.
申请公布号 US8792264(B2) 申请公布日期 2014.07.29
申请号 US201313964402 申请日期 2013.08.12
申请人 Seagate Technology LLC 发明人 Jin Insik;Wang Xiaobin;Lu Yong;Xi Haiwen
分类号 G11C11/22 主分类号 G11C11/22
代理机构 Mueting Raasch & Gebhardt PA 代理人 Mueting Raasch & Gebhardt PA
主权项 1. A method of switching the magnetization orientation of an out-of-plane ferromagnetic free layer, the method comprising: passing an AC switching current through the out-of-plane ferromagnetic free layer, wherein the AC switching current switches the magnetization orientation of the ferromagnetic free layer.
地址 Cupertino CA US