Semiconductor device

摘要

In this semiconductor device, the through-hole is formed in the substrate, and is located under the conductive pattern. The insulating layer is located at the bottom surface of the through-hole. The conductive pattern is located on one surface side of the substrate. The opening pattern is formed in the insulating layer which is located between the through-hole and the conductive pattern, where the distance r3 from the circumference of the opening pattern to the central axis of the through-hole is smaller than the distance r1 in the through-hole. By providing the opening pattern, the conductive pattern is exposed at the bottom surface of the through-hole. The bump is located on the back surface side of the substrate, and is formed integrally with the through-electrode.

主权项

1. A semiconductor device comprising:
a substrate, the substrate comprising a first surface and a second surface, the second surface is another side of the first surface; a conductive pattern located on the first surface side of the substrate; a through-hole formed in the substrate and located over the conductive pattern; an insulating layer located at a bottom surface of the through-hole, the bottom surface is located on the first surface side; an opening pattern formed in the insulating layer, a width of the opening pattern is smaller than a width of a bottom of the through-hole, and the conductive pattern is exposed to the bottom surface of the through-hole; a through-electrode formed in the opening pattern and in the through-hole, so as to be connected to the conductive pattern; and a bump located on the second surface and formed integrally with the through-electrode.