发明名称 |
Aluminum nitride substrate, aluminum nitride circuit board, semiconductor apparatus, and method for manufacturing aluminum nitride substrate |
摘要 |
The present invention provides an aluminum nitride substrate and an aluminum nitride circuit board having excellent insulation characteristics and heat dissipation properties and having high strength, a semiconductor apparatus, and a method for manufacturing an aluminum nitride substrate.;An aluminum nitride substrate according to the present invention is an aluminum nitride substrate having aluminum nitride as a main component and comprising a polycrystal containing a plurality of aluminum nitride grains, and complex oxide grains being present at grain boundaries of the aluminum nitride grains and including a rare earth element and aluminum, wherein the aluminum nitride grains have a maximum grain size of 10 μm or less, the complex oxide grains have a maximum grain size smaller than the maximum grain size of the aluminum nitride grains, the number of the complex oxide grains having a grain size of 1 μm or more being present in a field of view of 100 μm×100 μm of a surface of the aluminum nitride substrate observed is 40 or more, the aluminum nitride substrate has a bending strength of 400 MPa or more in an unpolished state after firing, and the aluminum nitride substrate has a volume resistivity of 1012 Ωm or more. |
申请公布号 |
US8791566(B2) |
申请公布日期 |
2014.07.29 |
申请号 |
US201013259222 |
申请日期 |
2010.02.05 |
申请人 |
Kabushiki Kaisha Toshiba;Toshiba Materials Co., Ltd. |
发明人 |
Yamaguchi Haruhiko;Fukuda Yoshiyuki |
分类号 |
H01L23/48;H01L23/52;H01L29/40;C04B35/581;H01L23/15;C04B37/02;H05K1/03 |
主分类号 |
H01L23/48 |
代理机构 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. An aluminum nitride substrate suitable for a circuit board, comprising:
a polycrystal, wherein the polycrystal further comprises:
a plurality of aluminum nitride grains; anda plurality of complex oxide grains including a rare earth element and aluminum at grain boundaries of the aluminum nitride grains,wherein
the plurality of aluminum nitride grains have a maximum aluminum nitride grain size of 10 μm or less, the plurality of complex oxide grains have a maximum oxide grain size smaller than the maximum aluminum nitride grain size, a number of complex oxide grains in the plurality of complex oxide grains of grain size of 1 μm or more in an area of 100 μm×100 μm of a surface of the aluminum nitride substrate observed is 40 to 70, an average grain size of the complex oxide grains is from 2 to 3 μm, a content of the rare earth element with respect to the aluminum nitride substrate is from 3% by mass to 6% by mass in terms of a rare earth oxide equivalent amount, the aluminum nitride substrate has a relative density of 99% or more, the aluminum nitride substrate has a bending strength of 400 MPa to 500 MPa in an unpolished state after firing, the aluminum nitride substrate has a volume resistivity of 1012 Ωm to 1015 Ωm, and the aluminum nitride substrate has a thermal conductivity of 160 W/m·K to 190 W/m·K; wherein the aluminum nitride substrate has the bending strength of 450 MPa to 550 MPa when the aluminum nitride substrate is polished to a surface roughness Ra of up to 1 μm after firing. |
地址 |
Tokyo JP |