Nonvolatile semiconductor memory device and method for manufacturing same

摘要

According to one embodiment, a nonvolatile semiconductor memory device includes a stacked structure, a semiconductor pillar, a memory layer and an outer insulating film. The stacked structure includes a plurality of electrode films and a plurality of interelectrode insulating films alternately stacked in a first direction. The semiconductor pillar pierces the stacked structure in the first direction. The memory layer is provided between the electrode films and the semiconductor pillar. The outer insulating film is provided between the electrode films and the memory layer. The device includes a first region and a second region. An outer diameter of the outer insulating film along a second direction perpendicular to the first direction in the first region is larger than that in the second region. A thickness of the outer insulating film along the second direction in the first region is thicker than that in the second region.

主权项

1. A nonvolatile semiconductor memory device comprising:
a stacked structure including a plurality of electrode films and a plurality of interelectrode insulating films alternately stacked in a first direction; a semiconductor pillar piercing the stacked structure in the first direction; a memory layer provided between each of the electrode films and the semiconductor pillar; an inner insulating film provided between the memory layer and the semiconductor pillar; and an outer insulating film provided between each of the electrode films and the memory layer, the device including a first region and a second region, the first region including a first electrode film being one of the electrode films, the second region including a second electrode film being an other of the electrode films, an outer diameter of the outer insulating film along a second direction perpendicular to the first direction in the first region being larger than an outer diameter of the outer insulating film along the second direction in the second region, a thickness of the outer insulating film along the second direction changing at a region between the first region and the second region, and a first thickness of the outer insulating film along the second direction in the first region being thicker than a second thickness of the outer insulating film along the second direction in the second region, the first thickness being a thickness in all of a region between the semiconductor pillar and the first electrode film, and the second thickness being a thickness in all of a region between the semiconductor pillar and the second electrode film located in the second region.