Oxide semiconductor field effect transistor and method for manufacturing the same

摘要

A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3):
In/(In+Zn)=0.2 to 0.8  (1)In/(In+X)=0.29 to 0.99  (2)Zn/(X+Zn)=0.29 to 0.99  (3).

主权项

1. A field effect transistor comprising a semiconductor layer, the semiconductor layer comprising a composite oxide comprising In and Zn in an atomic ratio of In/(In+Zn) of 0.2 to 0.8, wherein
a radical distribution function (RDF) obtained by grazing incidence X-ray scattering of the semiconductor layer satisfies the relationship
A/B>0.7where A is the maximum value of RDF with an interatomic distance of 0.30 to 0.36 nm and B is the maximum value of RDF with an interatomic distance of 0.36 to 0.42,
and wherein the energy width (E0) on the non-localized level of the semiconductor layer is 14 meV or less.