Silicon-containing film, resin composition, and pattern formation method

摘要

A pattern-forming method includes forming a silicon-containing film on a substrate, the silicon-containing film having a mass ratio of silicon atoms to carbon atoms of 2 to 12. A shape transfer target layer is formed on the silicon-containing film. A fine pattern is transferred to the shape transfer target layer using a stamper that has a fine pattern to form a resist pattern. The silicon-containing film and the substrate are dry-etched using the resist pattern as a mask to form a pattern on the substrate in nanoimprint lithography. According to another aspect of the invention, a silicon-containing film includes silicon atoms and carbon atoms. A mass ratio of silicon atoms to carbon atoms is 2 to 12. The silicon-containing film is used for a pattern-forming method employed in nanoimprint lithography.

主权项

1. A pattern-forming method comprising:
forming a silicon-containing film on a substrate, the silicon-containing film having a mass ratio of silicon atoms to carbon atoms of 2 to 12; forming a shape transfer target layer on the silicon-containing film; transferring a fine pattern to the shape transfer target layer using a stamper that has a fine pattern to form a resist pattern; and dry-etching the silicon-containing film and the substrate using the resist pattern as a mask to form a pattern on the substrate in nanoimprint lithography.