Doping of semiconductor fin devices

摘要

A semiconductor structure includes of a plurality of semiconductor fins overlying an insulator layer, a gate dielectric overlying a portion of said semiconductor fin, and a gate electrode overlying the gate dielectric. Each of the semiconductor fins has a top surface, a first sidewall surface, and a second sidewall surface. Dopant ions are implanted at a first angle (e.g., greater than about 7°) with respect to the normal of the top surface of the semiconductor fin to dope the first sidewall surface and the top surface. Further dopant ions are implanted with respect to the normal of the top surface of the semiconductor fin to dope the second sidewall surface and the top surface.

主权项

1. A method of doping semiconductor fins of multiple-gate transistors, the method comprising:
providing a semiconductor structure comprising of a plurality of semiconductor fins overlying an insulator layer, each fin having a gate dielectric overlying a portion of that semiconductor fin, and a gate electrode overlying said gate dielectric, each of the semiconductor fins having a channel region of a first conductivity type disposed beneath the gate electrode, the channel region located in a top surface, a first sidewall surface, and a second sidewall surface of the semiconductor fin; and forming a source region and/or drain region comprising:
implanting dopant ions of an opposite second conductivity type in the first sidewall surface and in the top surface at an angle α to dope along the first sidewall surface and along the top surface, the angle α being between 26 degrees and about 63 degrees with respect to the normal of the top surface and being in a first plane perpendicular to the first sidewall surface, the normal of the top surface being in the first plane; andimplanting dopant ions of the second conductivity type in the second sidewall surface and in the top surface at an angle β to dope along the second sidewall surface and along the top surface, the angle β being between 26 degrees and about 63 degrees with respect to the normal of the top surface and being in a second plane perpendicular to the second sidewall surface, the normal of the top surface being in the second plane.