Electron beam exposure system

摘要

The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising:
a beamlet generator for generating a plurality of electron beamlets;a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet;a controller, connected to the modulation array for individually controlling the modulators,an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator;a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, anda target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

主权项

id="REI-00002" date="20140729" 1. A method for transferring a pattern onto a target exposure surface with a multi-beam lithography system, comprising the steps of:
generating a plurality of beamlets; individually modulating the intensity of each beamlet of said plurality of beamlets by means of a modulator device; controlling said modulator device, using control signals, by means of a controller operationally coupled to said modulator; individually adjusting said control signals.