Semiconductor device having a multilayer interconnection structure

摘要

A semiconductor device includes first and second conductor patterns embedded in a first interlayer insulation film and a third conductor pattern embedded in a second interlayer insulation film, the third conductor pattern including a main part and an extension part, the extension part being electrically connected to the first conductor pattern by a first via-plug, the extension part having a branched pattern closer to the main part compared with the first conductor pattern, the branched pattern making a contact with the second conductor pattern via a second via-plug, each of the main part, extension part including the branched pattern, first via-plug and second via-plug forming a damascene structure.

主权项

1. A semiconductor device comprising:
a substrate; a first interlayer insulation film formed above said substrate; a first conductor pattern formed in said first interlayer insulation film and a second conductor pattern formed in said first interlayer insulation film, said second conductor pattern being separated from said first conductor pattern in a plan view; a second interlayer insulation film formed above said first insulation film; a third conductor pattern formed in said second interlayer insulation film; an extension part formed in said second interlayer insulation film and connected to said third conductor pattern in a plan view, a width of said extension part being narrower than a width of said third conductor pattern; a first via-plug formed on said first conductor pattern and under said extension part; a branched pattern formed in said second interlayer insulation film and connected to said extension part in a plan view; and a second via-plug formed on said second conductor pattern and under said branched pattern.