Avalanche diode having an enhanced defect concentration level and method of making the same

摘要

The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. The avalanche ignition region is preferably formed wider than the diode depletion zone, and is preferably created by placement, preferably by ion implantation, of an atomic specie different from that of the principal device structure. The doping concentration of the placed atomic specie should be sufficiently high to ensure substantially immediate onset of avalanche current when the diode breakdown voltage is exceeded. The new atomic specie preferably comprises argon or nitrogen, but other atomic species can be employed. However, other means of increasing a defect concentration level in the diode depletion zone, such as an altered annealing program, are also contemplated.

主权项

1. A semiconductor device comprising:
an anode region; a cathode region adjoining the anode region; an avalanche ignition region formed in a first region surrounding a juncture of the anode region with the cathode region, wherein the avalanche ignition region comprises an enhanced defect concentration level over a defect concentration level of the anode region and the cathode region; and a depletion zone created in a second region surrounding the juncture of the anode region with the cathode region, wherein the avalanche ignition region is wider than the depletion zone.