Semiconductor device and method of manufacturing the same

摘要

A semiconductor device includes an interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface of an element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a first stack including a first silicon nitride film or a high dielectric constant film interposed between a first and a second silicon oxide film or a second stack including a second high dielectric constant film and a third silicon oxide film, and a second silicon nitride film formed between the control electrode layer and the first or the second stack. The second silicon nitride film is relatively thinner in the third region than in the first region.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; an element isolation region defined in the semiconductor substrate and having an element isolation insulating film formed therein; an active region defined in the semiconductor substrate delineated by the element isolation region; a gate insulating film formed in the active region; a charge storage layer formed above the gate insulating film; a multilayered interelectrode insulating film formed in a first region above an upper surface portion of the element isolation insulating film, a second region along a sidewall portion of the charge storage layer, and a third region above an upper surface portion of the charge storage layer; and a control electrode layer formed above the interelectrode insulating film; wherein the interelectrode insulating film comprises a first stack including a first silicon nitride film or a first high dielectric constant film interposed between a first silicon oxide film and a second silicon oxide film formed above the first silicon oxide film or a second stack including a second high dielectric constant film and a third silicon oxide film formed above the second high dielectric constant film, and a second silicon nitride film formed between the control electrode layer and the first or the second stack and, wherein the second silicon nitride film is absent in the third region.