发明名称 |
Actinic ray-sensitive or radiation-sensitive resin composition, and resist film, pattern forming method, method for preparing electronic device, and electronic device, each using the same |
摘要 |
An actinic ray-sensitive or radiation-sensitive resin composition capable of forming a hole pattern which has an ultrafine pore diameter (for example, 60 nm or less) and has an excellent cross-sectional shape with excellent local pattern dimensional uniformity; and a resist film, a pattern forming method, a method for preparing an electronic device, and an electronic device, each using the same, are provided.;The actinic ray-sensitive or radiation-sensitive resin composition includes (P) a resin containing 30 mol % or more of a repeating unit (a) represented by the following general formula (I) based on all the repeating units; (B) a compound capable of generating an acid upon irradiation of actinic rays or radiation; and (G) a compound having at least one of a fluorine atom and a silicon atom, and further having basicity or being capable of increasing the basicity by an action of an acid:; |
申请公布号 |
US8790860(B2) |
申请公布日期 |
2014.07.29 |
申请号 |
US201213610271 |
申请日期 |
2012.09.11 |
申请人 |
FUJIFILM Corporation |
发明人 |
Koshijima Kosuke;Takahashi Hidenori;Yamaguchi Shuhei;Yamamoto Kei |
分类号 |
G03F7/038;G03F7/039;G03F7/20;G03F7/30;G03F7/32 |
主分类号 |
G03F7/038 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. An actinic ray-sensitive or radiation-sensitive resin composition comprising:
(P) a resin containing 30 mol % or more of a repeating unit (a) represented by the following general formula (I) based on all the repeating units; (B) a compound capable of generating an acid upon irradiation of actinic rays or radiation; (G) a non-photosensitive compound having at least one of a fluorine atom and a silicon atom, and further having basicity or being capable of increasing the basicity by an action of an acid; (in the general formula (I), R0 represents a hydrogen atom or a methyl group; and each of R1, R2, and R3 independently represents a linear or branched alkyl group); and (E) a hydrophobic resin containing at least one of a fluorine atom and a silicon atom. |
地址 |
Tokyo JP |