Method of etching semiconductor nanocrystals

摘要

Disclosed is a method of etching semiconductor nanocrystals, which includes dissolving semiconductor nanocrystals in a halogenated solvent containing phosphine so that anisotropic etching of the surface of semiconductor nanocrystals is induced or adding a primary amine to a halogenated solvent containing phosphine and photoexciting semiconductor nanocrystals thus inducing isotropic etching of the surface of the nanocrystals, thereby reproducibly controlling properties of semiconductor nanocrystals including absorption wavelength, emission wavelength, emission intensity, average size, size distribution, shape, and surface state.

主权项

1. A method of etching semiconductor nanocrystals, comprising:
(1) preparing a first solution by dissolving a phosphine in a halogenated solvent, wherein the first solution includes halide ions as a reaction product of the phosphine and the halogenated solvent; and (2) combining semiconductor nanocrystals with the first solution, wherein the halide ions induce chemical etching of the semiconductor nanocrystals by removing metal ions from the surface of the semiconductor nanocrystals.