Method of producing microstructure of nitride semiconductor and photonic crystal prepared according to the method

摘要

The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.

主权项

1. A method of producing a microstructure of a nitride semiconductor, comprising:
a step of preparing a semiconductor structure provided with at least one trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering the main surface of the nitride semiconductor excluding the at least one trench; a first heat-treatment step of, after the step of preparing the semiconductor structure, heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the at least one trench; a step of removing the heat-treating mask after the first heat-treatment step; and a second heat-treatment step of, after the step of removing the heat-treating mask, heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the at least one trench.