| 发明名称 | Light emitting diode and method of making the same | ||
| 摘要 | An embodiment of the present invention discloses a light-emitting structure having a light output power of more than 4mW at 20 mA current. Another embodiment of the present invention discloses a method of making a light-emitting structure having a light output power of more than 4mW at 20 mA current, and a layer with a thickness of 0.5 μm˜3μm. | ||
| 申请公布号 | US8791467(B2) | 申请公布日期 | 2014.07.29 |
| 申请号 | US201113105363 | 申请日期 | 2011.05.11 |
| 申请人 | Epistar Corporation | 发明人 | Yang Kuang-Neng |
| 分类号 | H01L33/00 | 主分类号 | H01L33/00 |
| 代理机构 | Muncy, Geissler, Olds & Lowe, P.C. | 代理人 | Muncy, Geissler, Olds & Lowe, P.C. |
| 主权项 | 1. A light-emitting structure, comprising: a layer structure, having a first edge, for emitting light; and a carrier substrate, having a second edge, bonded to the layer structure and not being a single crystal wafer; wherein the light-emitting structure has a light output power of more than 4 mW at 20 mA current. | ||
| 地址 | Hsinchu TW | ||