Silver interconnects for stacked non-volatile memory device and method

摘要

A method of forming a memory device. A first thickness of dielectric material overlies a surface region of a substrate. A first wiring material including a first lining material and a silver material are formed overlying the dielectric material. A first adhesion material and an amorphous silicon switching material including a contact material are deposited overlying the first wiring material. The method forms one or more first structures configured to spatially extend in a first direction from the amorphous silicon switching material, the contact material, and the first wiring material. A thickness of second dielectric material is deposited overlying the one or more first structures. The method forms a second wiring structure comprising at least a second silver material and a second lining material spatially extending in a second direction orthogonal to the first direction overlying the second dielectric material and in electrical contact with the switching material.

主权项

1. A method of forming a memory device, comprising:
providing a substrate having a surface region; forming a first thickness of dielectric material overlying the surface region; subjecting the first thickness of dielectric material to a first patterning and etching process to form a first opening structure in a portion of the first thickness of dielectric material; depositing a first wiring material comprising at least a silver material to fill the opening structure and forming a thickness of the first wiring material overlying the first dielectric material; depositing a switching material comprising an amorphous silicon material overlying the first wiring material; subjecting at least the switching material and the thickness of the first wiring material to a first patterning and etching process to form one or more first structures, the first structures comprising a switching element and a first wiring structure comprising at least the first silver material, the first wiring structure being elongated in shape and spatially configured to extend in a first direction; depositing a second thickness of dielectric material overlying the one or more first structures; forming a via opening in the second thickness of dielectric material overlying at least a first portion of the switching element in each of the one or more first structure; and forming a second wiring structure overlying the switching element, the second wiring structure comprising at least a second silver material and having a first portion in the via and being in electrical contact with at least a second the portion of the switching element, and a second portion elongated in shape and spatially configured to extend in a second direction orthogonal to the first direction.