Method of manufacturing semiconductor device

摘要

A problem of a resist mask collapse due to a plasma process is solved. In a method of manufacturing a semiconductor device including steps of a plasma process to a sample having a mask made of an organic material, the plasma process includes a first step of a plasma process under a gas containing any of fluorine, oxygen, or nitrogen, or containing all of them, and a second step of the plasma process under a gas containing a rare gas without containing any of fluorine, oxygen, and nitrogen, and the first step and the second step are repeated.

主权项

1. A method of manufacturing a semiconductor device comprising steps of a plasma process performed on a semiconductor substrate having an insulating film and a mask formed on the insulating film and made of an organic material,
the plasma process comprising:
a first step of generating a stress to an organic material comprising a first photoresist film and an antireflection film so as to form a second photoresist film and a patterned antireflection film, said second photoresist film and patterned antireflection film having a second pattern shrinking the first pattern using a gas containing a rare gas without containing any of fluorine, oxygen, and nitrogen;a second step of relaxing the stress from the second photoresist film and the patterned antireflection film using a gas containing a rare gas without containing any of fluorine, oxygen, and nitrogen; andetching the insulating film using the second photoresist film and the patterned antireflection film as a mask, wherein the first step and the second step are alternately repeated, and wherein the first step is a performed for a time of 2 seconds or longer and 15 seconds or shorter.