Method of fabricating polycrystalline silicon layer, TFT fabricated using the same, method of fabricating TFT, and organic light emitting diode display device having the same

摘要

A method of fabricating a polycrystalline silicon layer includes: forming an amorphous silicon layer on a substrate; crystallizing the amorphous silicon layer into a polycrystalline silicon layer using a crystallization-inducing metal; forming a metal layer pattern or metal silicide layer pattern in contact with an upper or lower region of the polycrystalline silicon layer corresponding to a region excluding a channel region in the polycrystalline silicon layer; and annealing the substrate to getter the crystallization-inducing metal existing in the channel region of the polycrystalline silicon layer to the region in the polycrystalline silicon layer having the metal layer pattern or metal silicide layer pattern. Accordingly, the crystallization-inducing metal existing in the channel region of the polycrystalline silicon layer can be effectively removed, and thus a thin film transistor having an improved leakage current characteristic and an OLED display device including the same can be fabricated.

主权项

1. A method of removing a crystallization-inducing metal from a first predetermined region of a polycrystalline silicon layer crystallized using a crystallization-inducing metal, the method comprising:
providing a metal layer pattern or metal silicide layer pattern in contact with an upper or lower surface of the polycrystalline silicon layer in a second predetermined region of the polycrystalline silicon layer; and performing annealing to getter the crystallization-inducing metal existing in the first predetermined region to the second predetermined region.