Manufacturing method of semiconductor element

摘要

A manufacturing method of a semiconductor element comprises the steps of (a) preparing a growth substrate, (b) forming a semiconductor layer on the growth substrate, (c) dividing the semiconductor layer into a plurality of elements while leaving at least a part of the semiconductor layer between each element to form a sacrificial layer around each element, (d) forming a metal layer on the semiconductor layer, (e) bonding a supporting substrate to the semiconductor layer via the metal layer, and (f) removing the growth substrate from the semiconductor layer by irradiating a laser whose area of irradiation covers each element within an outline of the sacrificial layer of each element.

主权项

1. A manufacturing method of a semiconductor element, comprising:
(a) preparing a growth substrate; (b) forming a semiconductor layer on the growth substrate; (c) dividing the semiconductor layer into a plurality of elements while leaving at least a part of the semiconductor layer between the elements to form a sacrificial layer around each element; (d) forming a metal layer on the semiconductor layer; (e) bonding a supporting substrate to the semiconductor layer via the metal layer; and (f) removing the growth substrate from the semiconductor layer by irradiating a laser whose area of irradiation covers each element within an outline of the sacrificial layer of each element; wherein a width of the sacrificial layer is in a range of 10 to 20 μm.