| 摘要 |
<p>The present invention proposes a method for easily manufacturing a semiconductor device to prevent the difference between film thicknesses of a source electrode or a drain electrode, or disconnection. The semiconductor device includes: a semiconductor layer formed on an insulating substrate; a first insulating layer formed on a semiconductor layer; a gate electrode formed on the first insulating layer; a second insulating layer formed on the gate electrode; an opening portion configured to reach the semiconductor layer formed on at least the first insulating layer and the second insulating layer; and a step portion formed on a side surface of the second insulating layer in the opening portion.</p> |
