Substrate processing apparatus and substrate processing method

摘要

The substrate processing apparatus includes a process chamber which accommodates a wafer and performs a plasma etching process on the wafer, an exhaust chamber which communicates with the process chamber, an exhaust plate which divides the process chamber from the exhaust chamber and prevents plasma inside the process chamber from leaking into the exhaust chamber, and an upper electrode plate arranged inside the exhaust chamber, wherein the exhaust plate includes a plurality of through holes, and the upper electrode plate includes a plurality of through holes, is capable of contacting the exhaust plate in parallel, and is capable of being spaced apart from the exhaust plate.

主权项

1. A substrate processing apparatus comprising:
a process chamber accommodating a substrate to perform a plasma process on the substrate; an exhaust chamber communicating with the process chamber; an exhaust plate dividing the process chamber from the exhaust chamber, including a plurality of first ventilation holes penetrating through the exhaust plate, and preventing plasma in the process chamber from leaking into the exhaust chamber; and an exhaust adjustment plate arranged inside the exhaust chamber, moving towards and away from the exhaust plate, and including a plurality of second ventilation holes penetrating through the exhaust adjustment plate, wherein the exhaust adjustment plate comprises a first exhaust adjustment plate and a second exhaust adjustment plate, and the first exhaust adjustment plate and the second exhaust adjustment plate independently move toward and away from the exhaust plate.