METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING SYSTEM

摘要

PROBLEM TO BE SOLVED: To shorten the time to use an accelerator for forming an n-layer.SOLUTION: A method of manufacturing a semiconductor device comprises: an irradiation step (S10) of irradiating a substrate with a particle beam by an accelerator; and an annealing step (S12) of heat-treating the substrate in an atmosphere containing hydrogen in order to form an n-layer in the substrate. In the irradiation step (S10), the substrate is irradiated with the particle beam containing hydrogen ions so as not to reach the hydrogen quantity required for forming the n-layer, or the substrate is irradiated with the particle beam containing no hydrogen ion.