HIGH FREQUENCY POWER AMPLIFIER

摘要

PROBLEM TO BE SOLVED: To provide a high frequency power amplifier that simplifies harmonic handling of a transistor while implementing a compact inductor for canceling a parasitic capacitance of the transistor.SOLUTION: The high frequency power amplifier comprises: a first bonding wire 4a connecting an electrode pattern 9 disposed on a transistor chip 1 and an electrode pattern 6a disposed on a first dielectric substrate 2; a second bonding wire 4b connecting the electrode pattern 6a and an electrode pattern 6b disposed on the first dielectric substrate 2 to constitute an open end stub; and a third bonding wire 5 connecting the electrode pattern 9 and an electrode pattern 7 connected to an output terminal 8 of a second dielectric substrate 3. The length of the open end stub is less than half a wavelength at the second harmonic frequency.