发明名称 |
RAMAN SCATTERING PHOTOENHANCEMENT DEVICE, METHOD FOR MANUFACTURING RAMAN SCATTERING PHOTOENHANCEMENT DEVICE, AND RAMAN LASER LIGHT SOURCE USING RAMAN SCATTERING PHOTOENHANCEMENT DEVICE |
摘要 |
<p>A Raman scattered light enhancement device including a waveguide provided in a photonic crystal (20) made of a semiconductor substrate in which holes (20a) are formed. The waveguide has resonant modes with respect to incident light at a plurality of frequencies. A difference in frequency between one resonant mode and another resonant mode is equal to a Raman shift frequency of the semiconductor substrate. A waveguide forming direction with respect to a crystal plane orientation of the semiconductor substrate is set so as to maximize a Raman transition probability which is represented by electromagnetic field distribution of the two resonant modes and a Raman tensor of the semiconductor substrate.</p> |
申请公布号 |
KR20140093758(A) |
申请公布日期 |
2014.07.28 |
申请号 |
KR20147019379 |
申请日期 |
2013.03.08 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
TAKAHASHI YASUSHI;INUI YOSHITAKA;ASANO TAKASHI;NODA SUSUMU;CHIHARA MASAHIRO |
分类号 |
G02F1/365;G02F1/35 |
主分类号 |
G02F1/365 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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