| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing method for a wafer by which even a TSV wafer with a bump electrode disposed on the back of a base plate can be relatively easily divided along streets, and also entry of copper ion into the base plate can be reliably blocked.SOLUTION: A wafer, having a device formed in an area sectioned by a grid of streets in a function layer arranged over the surface of a silicon substrate, an electrode projecting from the surface of the device and also an electrode terminal connected to the device, is plasma-etched, thereby dividing the wafer into individual chips along the streets. A film of silicon dioxide (SiO) is formed on the internal peripheral surface of an electrode embedding through-hole, in which a pierced electrode formed on the silicon substrate is embedded, and also on the back and sides of each chip. |
