| 摘要 |
PROBLEM TO BE SOLVED: To determine deterioration of all memory cells even during use of a non-volatile memory.SOLUTION: When a writing target sector in a non-volatile memory mem is changed from a first sector to a second sector out of a plurality of sectors, a control device 100 allows respective memory cells in the first sector to perform All0 writing operation. The control device 100 allows memory cells in a third sector becoming a writing target sector before the first sector in sectors other than the second sector out of the plurality of sectors to perform SBCL-READ operation. For instance, the third sector is a sector becoming a writing target sector next to the second sector out of the plurality of sectors. |
