SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME, POWER SUPPLY DEVICE AND HIGH-FREQUENCY AMPLIFIER

摘要

PROBLEM TO BE SOLVED: To inhibit decrease in drain current due to electrons captured by a trap formed on a surface of an insulation film and sufficiently inhibit current collapse.SOLUTION: A semiconductor device comprises: a compound semiconductor laminated structure 2 composed of a plurality of compound semiconductor layers which are stacked on a semiconductor substrate 1; and a first insulation film 6 which covers a surface of the compound semiconductor laminated structure and which is a silicon nitride film including a first region 6X containing on a surface side, a nitrogen element higher than a stoichiometric ratio.