发明名称 |
METHOD FOR FORMING THROUGH VIA AND METHOD FOR MANUFACTURING ELECTRONIC PRODUCT |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for forming a through via capable of suppressing copper from diffusing even when copper is used for a conductor and suppressing a substrate from being warped even when the thickness of the substrate becomes thin.SOLUTION: A method for manufacturing a through via comprises the steps of: forming a hole-like trench 3 from a surface of a substrate 1 toward the inside of the substrate 1; forming a first insulating film 4 in the trench 3; forming a conductor film 6V which serves as the through via in the trench 3 in which the first insulating film 4 is formed; protruding the first insulating film 4 including the conductor film 6V inside from a rear surface of the substrate 1 by retreating the rear surface of the substrate 1; forming a second insulating film 9 on the rear surface of the substrate 1 and the first insulating film 4 protruded from the rear surface of the substrate 1; and exposing the conductor film 6V to the outside by retreating the second insulating film 9, the first insulating film 4 and the conductor film 6V. The second insulating film 9 is formed of a polymer membrane.</p> |
申请公布号 |
JP2014138118(A) |
申请公布日期 |
2014.07.28 |
申请号 |
JP20130006529 |
申请日期 |
2013.01.17 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
JO TOSHIHIKO;SUGITA KIPPEI;HASHIMOTO HIROYUKI;HARADA MUNEO |
分类号 |
H01L21/3205;H01L21/768;H01L23/32;H01L23/522;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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