PLASMA PROCESSING METHOD AND PLASMA PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To improve controllability of a film thickness according to a temperature of a member.SOLUTION: A plasma processing method includes a film forming step, a plasma processing step, and a removal step. The film forming step forms a silicon oxide film on a surface of a member arranged inside a chamber by plasma of a silicon-containing gas not including oxygen while adjusting the member at a lower temperature than other members. The plasma processing step processes a workpiece carried into the chamber by plasma of a process gas after a silicon oxide film is formed on the surface of the member. The removal step removes the silicon oxide film from the surface of the member by plasma of a fluorine-containing gas after the plasma-processed workpiece is carried out of the chamber.