| 摘要 |
PROBLEM TO BE SOLVED: To disclose a method of manufacturing a semiconductor device, capable of suppressing damages to a semiconductor wafer.SOLUTION: In a portion where a communication groove 40 is not formed in an insulating layer 30, when a protective tape 60 is stuck to the front surface side of a semiconductor wafer 2, the protective tape 60 is stuck to the front surface of a surface electrode 20 and the front surface of the insulating layer 30. On the other hand, in a portion where the communication groove 40 is formed in the insulating layer 30, when the protective tape 60 is stuck to the front surface of the semiconductor wafer 2, the protective tape 60 is stuck to the front surface of the surface electrode 20, but not stuck to the front surface of the insulating layer 30 since the communication groove 40 is formed. Therefore, a space 70 communicates with a dicing line groove 50 via the communication groove 40. Then, when the back surface of the semiconductor wafer 2 is processed, even if the semiconductor wafer 2 is put under a vacuum environment, the air in the space 70 is discharged to the outside from the outer peripheral edge of the semiconductor wafer 2 through the communication groove 40 and the dicing line groove 50. |
