发明名称 PAD STRUCTURES AND WIRING STRUCTURES IN VERTICAL TYPE SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide pad structures and wiring structures including the pad structures in a vertical type semiconductor device that can be formed by a simple process.SOLUTION: A pad structure in a vertical type semiconductor device includes: a first conductive line which includes first pad regions at an upper surface of an edge portion and has a line shape with an end portion extended to a first position; and a second conductive line which is provided over and separated from the first conductive line, includes second pad regions at an upper surface of an edge portion, has a line shape with an end portion extended to the first position, and has a dent portion at a portion facing the first pad regions in a vertical direction so as to expose the first pad regions.
申请公布号 JP2014138188(A) 申请公布日期 2014.07.28
申请号 JP20140004390 申请日期 2014.01.14
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 HWANG SUNG-MIN;LEE YOUNG-HO;CHO SEONG-SOON;LEE WOON-KYUNG
分类号 H01L27/115;H01L21/336;H01L21/8247;H01L27/10;H01L29/788;H01L29/792 主分类号 H01L27/115
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