| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile memory device capable of performing a high speed reading operation regardless of the loading of the non-volatile memory device and its control method.SOLUTION: The non-volatile memory device includes: a cell array including a plurality of cell strings formed in a vertical direction on a substrate, in which a memory cell included in each of the plurality of cell strings is controlled by a plurality of word lines and a plurality of bit lines; a page buffer connected to the plurality of bit lines; a voltage generator for providing a voltage to the plurality of word lines and the plurality of bit lines; an input/output buffer for temporarily storing sensing data to be transmitted from the page buffer, and for outputting the stored data to the outside; and a control logic for, after the sensing data are dumped from the page buffer to the input/output buffer, setting a state signal in a ready state prior to the recovery of a bias voltage provided to the cell array. |
