SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

摘要

A substrate processing apparatus according to the present invention can improve deposition uniformity of thin layers deposited on a substrate and can enhance the deposition efficiency. The substrate processing apparatus includes: a process chamber which provides a reaction space; a substrate support which is installed in the reaction space to support at least one substrate; a chamber lid which covers an upper portion of the process chamber in opposition to the substrate support; and a gas spray section which has a plurality of gas spray modules installed in the chamber lid and locally opposite to the substrate support. Each gas spray module generates plasma between a ground electrode and a plasma electrode, which face each other at a predetermined interval relatively narrower than an interval with respect to the substrate, and slantingly sprays source gas to a region where the plasma is generated through a gas spray member provided in the ground electrode.