| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME |
| 摘要 |
<p>A semiconductor memory device is provided. A vertical electrode is provided on a substrate. A blocking insulating layer is provided on the sidewall of the vertical electrode. Active patterns which are separated from the vertical electrode by the blocking insulating layer are provided. Information storage patterns are provided between the active patterns.</p> |
| 申请公布号 |
KR101421879(B1) |
申请公布日期 |
2014.07.28 |
| 申请号 |
KR20130004521 |
申请日期 |
2013.01.15 |
| 申请人 |
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) |
发明人 |
SONG, YUN HEUB;YANG, HYUNG JUN |
| 分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
| 代理机构 |
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代理人 |
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