COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable compound semiconductor device which can inhibit remaining of a generated hole in a device and improve switch characteristics to prevent device rupture.SOLUTION: A compound semiconductor device comprises: a compound semiconductor layer 2c; an insulation film 6 formed on the compound semiconductor layer 2c; and a gate electrode 9 and a field plate electrode 12 which are formed on the insulation film 6. The insulation film 6 has a part 6b which is located under the field plate electrode 12 and has a higher valence band level at a junction plane with the compound semiconductor layer 2c than a valence band level of the compound semiconductor layer 2c.