FORMING METHOD OF CURRENT BLOCKING LAYER AND MANUFACTURING METHOD OF LED USING THE SAME

摘要

The present invention relates to a forming method of a current blocking layer and a manufacturing method of an LED using the same and, more specifically, to the manufacturing method of the LED which forms the current blocking layer (CBL) with an etching method instead of the insertion of a nonconductor material or the surface processing and has high light extraction efficiency. The forming method of the CBL according to the present invention comprises a step of forming a dry etching protection film having a pattern of an electrode type on a p-type semiconductor layer which is formed on the top of a semiconductor substrate, an n-type semiconductor layer, and an active layer which are laminated in order; a step of forming the CBL on the p-type semiconductor layer by dry-etching the p-type semiconductor layer; and a step of eliminating the dry-etching protection layer.