发明名称 |
METHOD OF PRODUCING GLASS FROM PHOSPHORUS PENTOXIDE |
摘要 |
FIELD: chemistry.SUBSTANCE: silicon wafers are loaded into a quartz tray which is placed in a pipe located inside a heated single-zone furnace SDOM-3/100. A stream of carrier gas - hydrogen (H) - is passed through the pipe. Phosphorus anhydride (PO) is placed in the source area and heated to temperature of 300°C at which the source evaporates. The process is carried out at the following gas flow rates: O=40 l/h, nitrogen N=500 l/h.EFFECT: carrying out a phosphorus diffusion process using a solid diffusion source, reduced spread of values of surface concentration on the entire surface of the silicon wafer and short duration and low temperature of the process. |
申请公布号 |
RU2524149(C1) |
申请公布日期 |
2014.07.27 |
申请号 |
RU20130100524 |
申请日期 |
2013.01.09 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "DAGESTANSKIJ GOSUDARSTVENNYJ TEKHNICHESKIJ UNIVERSITET" (DGTU) |
发明人 |
ISMAILOV TAGIR ABDURASHIDOVICH;SHANGEREEVA BIJKE ALIEVNA;SHANGEREEV JUSUP PAKHRUTDINOVICH;MURTAZALIEV AZAMAT IBRAGIMOVICH |
分类号 |
H01L21/316 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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