发明名称 |
BORON DIFFUSION METHOD FOR FORMING P-REGION |
摘要 |
FIELD: chemistry.SUBSTANCE: in the boron diffusion method, the process is carried out using a gaseous source - diborane (BH) at temperature of 960°C for 35 minutes at the deposition step, with the following ratio of components: nitrogen N=240 l/h, oxygen O=120 l/h and hydrogen H=7.5 l/h, at the distillation step at temperature of 1100°C for 2 hours. Surface resistance R=155±5 ohm/cm.EFFECT: reduced spread of surface concentration values and obtaining trays that are uniformly doped on the length. |
申请公布号 |
RU2524151(C1) |
申请公布日期 |
2014.07.27 |
申请号 |
RU20130101313 |
申请日期 |
2013.01.10 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "DAGESTANSKIJ GOSUDARSTVENNYJ TEKHNICHESKIJ UNIVERSITET" (DGTU) |
发明人 |
ISMAILOV TAGIR ABDURASHIDOVICH;SHANGEREEVA BIJKE ALIEVNA;SHANGEREEV JUSUP PAKHRUTDINOVICH;MURTAZALIEV AZAMAT IBRAGIMOVICH |
分类号 |
H01L21/223 |
主分类号 |
H01L21/223 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|