发明名称 BORON DIFFUSION METHOD FOR FORMING P-REGION
摘要 FIELD: chemistry.SUBSTANCE: in the boron diffusion method, the process is carried out using a gaseous source - diborane (BH) at temperature of 960°C for 35 minutes at the deposition step, with the following ratio of components: nitrogen N=240 l/h, oxygen O=120 l/h and hydrogen H=7.5 l/h, at the distillation step at temperature of 1100°C for 2 hours. Surface resistance R=155±5 ohm/cm.EFFECT: reduced spread of surface concentration values and obtaining trays that are uniformly doped on the length.
申请公布号 RU2524151(C1) 申请公布日期 2014.07.27
申请号 RU20130101313 申请日期 2013.01.10
申请人 FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "DAGESTANSKIJ GOSUDARSTVENNYJ TEKHNICHESKIJ UNIVERSITET" (DGTU) 发明人 ISMAILOV TAGIR ABDURASHIDOVICH;SHANGEREEVA BIJKE ALIEVNA;SHANGEREEV JUSUP PAKHRUTDINOVICH;MURTAZALIEV AZAMAT IBRAGIMOVICH
分类号 H01L21/223 主分类号 H01L21/223
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