| 摘要 |
FIELD: radio engineering, communication.SUBSTANCE: device comprises: first (1) and second (2) output transistors with a different type of conductivity, emitters of which are connected to the output of the device (3), a first (4) power supply bus connected to the collector of the first (1) output transistor, a second (5) power supply bus, connected to the collector of the second (2) output transistor, the input of the device (4) is connected to the gates of the first (6) and second (7) input junction field-effect transistors, the drains of which are connected to the second (5) power supply bus, the base of the first (1) output transistor is connected to the source of the first (6) input transistor and the drain of a first (8) auxiliary transistor, the gate of which is connected to the first (4) power supply bus, and the source is connected to the first (4) power supply bus, the base of the second (2) output transistor is connected to the source of the second (7) input transistor and the drain of a second (9) additional transistor, the gate of which is connected to the first (4) power supply bus, and the source is connected to the first (4) power supply bus through a first (10) circuit of series-parallel connected p-n junctions.EFFECT: increase in resistance of the output stage and current gain thereof by multiple orders with sufficiently high stability of the through current of output transistors.3 cl, 8 dwg |
