METHOD OF PRODUCING THIN EPITAXIAL LAYERS OF ?-SIC ON MONOCRYSTALLINE SILICON

摘要

FIELD: chemistry.SUBSTANCE: method of producing thin epitaxial layers of ?-SiC on monocrystalline silicon includes sputtering a silicon target with SiC by scanning its surface with a laser beam in high vacuum conditions without adding gaseous reagents to the heated substrate. Sputtering is carried out using a laser with radiation wavelength ?=1.06 mcm and output radiation energy of 0.1-0.3 J at residual pressure in a growth chamber of 10-10Pa and substrate temperature of 950-1000°C.EFFECT: obtaining epitaxial layers of silicon carbide with a cubic modification on monocrystalline silicon substrates with a crystal-lattice orientation.4 dwg