发明名称 BYPASS CAPACITORS FOR HIGH VOLTAGE BIAS POWER IN THE MID FREQUENCY RF RANGE
摘要 <p>A system for decoupling arcing RF signals in a plasma chamber including a top electrode, an electrostatic chuck for supporting a semiconductor wafer, and a capacitor coupled between the at least one of a plurality of clamping electrodes in the surface of the electrostatic chuck and a baseplate of the electrostatic chuck, the capacitor having a capacitance of greater than about 19 nanofarads, the capacitor disposed within an interior volume of the electrostatic chuck. A method of decoupling arcing RF signals in a plasma chamber is also disclosed.</p>
申请公布号 KR20140093244(A) 申请公布日期 2014.07.25
申请号 KR20147013875 申请日期 2012.11.23
申请人 LAM RESEARCH CORPORATION 发明人 SATO ARTHUR
分类号 H05H1/46;H01L21/683 主分类号 H05H1/46
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