发明名称 Semiconductor Memory Device
摘要 An excess region on a chip plane is eliminated to reduce a chip size. A plurality of data pads, which input/output data, are arranged near one side of an outer periphery of a substrate in parallel with the aforementioned one side, and a plurality of data pads, which input/output data, are arranged on an inner side of the plurality of data pads in parallel with the plurality of data pads. NMOSs, which output data, are arranged between the data pads, and PMOSs, which output data, are arranged at positions where they face the NMOSs near the data pads.
申请公布号 KR101423486(B1) 申请公布日期 2014.07.25
申请号 KR20070114723 申请日期 2007.11.12
申请人 发明人
分类号 G11C11/40 主分类号 G11C11/40
代理机构 代理人
主权项
地址