发明名称 |
THREE DIMENSIONAL FET DEVICES HAVING DIFFERENT DEVICE WIDTHS |
摘要 |
A method of manufacturing a three dimensional FET device structure includes: providing a substrate having a semiconductor layer on an insulator layer; forming three dimensional fins in the semiconductor layer; applying a masking material to a first fin while exposing a second fin; applying a hydrogen atmosphere to the substrate and exposed second fin, the hydrogen atmosphere causing the exposed second fin to reflow and change shape; removing the masking material from the first fin; and forming a gate to wrap around each of the first and second fins. The first and second fins are formed having a device width such that the first fin having a first device width and a second fin having a second device width with the first device width being different than the second device width. |
申请公布号 |
US2014206181(A1) |
申请公布日期 |
2014.07.24 |
申请号 |
US201414226746 |
申请日期 |
2014.03.26 |
申请人 |
International Business Machines Corporation |
发明人 |
Cheng Kangguo;Doris Bruce B.;Khakifirooz Ali;Kerber Pranita |
分类号 |
H01L21/28;H01L29/66 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a three dimensional FET device structure comprising:
providing a substrate having a semiconductor layer on an insulator layer; forming a plurality of three dimensional fins in the semiconductor layer; applying a masking material to a first fin while exposing a second fin; applying a hydrogen atmosphere to the substrate and exposed second fin for a first predetermined time at a first predetermined temperature and pressure, the hydrogen atmosphere causing the exposed second fin to reflow and change shape; removing the masking material from the first fin; and forming a gate to wrap around each of the first and second fins; such that the first and second fins are formed having a device width being defined as the circumference of the three dimensional fin in contact with its gate and such that the first fin having a first device width and a second fin having a second device width with the first device width being different than the second device width. |
地址 |
Armonk NY US |